On Thursday, Intel introduced a flash chip that stores more data, paving the way for its rollout of upcoming high-capacity solid-state drives.
The chipmaker, along with Micron Technology, announced a 32-gigabit (Gb) NAND memory device built on a 34-nanometer manufacturing process.
The smaller 34-nanometer process bests Toshiba, which recently said it has begun using a 43-nanometer process that will enable solid-state drives with capacities as large as 256GB.
And Samsung said last week that it is slated to bring out a 256GB solid-state drive later this year.
Intel's 32Gb chip will enable more cost-effective solid-state drives, "instantly doubling … Read more